Samsung Electronics today has announced that it has begun mass production of first 512GB flash storage for next-generation mobile devices and it utilizes the Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips. The 512GB eUFS Consist of eight 64-layer 512Gb V-NAND chips and a controller chip which are stacked together. It also doubles the Samsung’s previous 48-layer V-NAND-based 256GB …
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