During their 5th annual Foundry Forum (SFF) 2021, Samsung introduced their roadmap for their 3nm and 2nm process nodes based on the Gate-All-Around (GAA) transistor structure. According to the company, 3nm-based chip designs is scheduled to start production in the first half of 2022, while 2nm-based chips will arrive in 2025. Samsung is continuously working … Continue reading "Samsung to introduce 2nm process node with Gate-All-Around (GAA) technology in 2025"
Friday, 8 October 2021
Samsung to introduce 2nm process node with Gate-All-Around (GAA) technology in 2025
During their 5th annual Foundry Forum (SFF) 2021, Samsung introduced their roadmap for their 3nm and 2nm process nodes based on the Gate-All-Around (GAA) transistor structure. According to the company, 3nm-based chip designs is scheduled to start production in the first half of 2022, while 2nm-based chips will arrive in 2025. Samsung is continuously working … Continue reading "Samsung to introduce 2nm process node with Gate-All-Around (GAA) technology in 2025"
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