Samsung Electronics has announced that it has commenced mass production of its first commercial embedded magnetic random access memory (eMRAM) product. It is based on the company’s 28-nanometer(nm) fully-depleted silicon-on-insulator (FD-SOI) process technology, called 28FDS. Samsung’s 28FDS-based eMRAM solution offers unprecedented power and speed advantages with lower cost. Since eMRAM does not require an erase cycle before writing data, its writing speed is approximately a thousand times faster than eFlash. Also, eMRAM uses lower voltages than eFlash, and does not consume electric power when in power-off mode, resulting in great power efficiency. Since an eMRAM module can easily be inserted in the back-end of the process by adding the least number of layers, it has less dependence on the front-end of the process for easy integration with existing logic technologies, such as bulk, fin, and FD-SOI transistor. By combining with 28FD-SOI for better transistor control and minimizing leakage current through body-bias control, Samsung’s eMRAM solution will provide differentiated benefits for a variety of applications including microcontroller unit (MCU), internet of things (IoT), and artificial intelligence (AI). https://www.youtube.com/watch?v=EB14K8Gq5-w Ryan Lee, vice president of foundry marketing at Samsung Electronics said: We are very proud of this achievement in offering right embedded non-volatile memory (eNVM) technology after overcoming complicated ...
Wednesday, 6 March 2019
Samsung starts mass production of first 28FDS-based eMRAM
Samsung Electronics has announced that it has commenced mass production of its first commercial embedded magnetic random access memory (eMRAM) product. It is based on the company’s 28-nanometer(nm) fully-depleted silicon-on-insulator (FD-SOI) process technology, called 28FDS. Samsung’s 28FDS-based eMRAM solution offers unprecedented power and speed advantages with lower cost. Since eMRAM does not require an erase cycle before writing data, its writing speed is approximately a thousand times faster than eFlash. Also, eMRAM uses lower voltages than eFlash, and does not consume electric power when in power-off mode, resulting in great power efficiency. Since an eMRAM module can easily be inserted in the back-end of the process by adding the least number of layers, it has less dependence on the front-end of the process for easy integration with existing logic technologies, such as bulk, fin, and FD-SOI transistor. By combining with 28FD-SOI for better transistor control and minimizing leakage current through body-bias control, Samsung’s eMRAM solution will provide differentiated benefits for a variety of applications including microcontroller unit (MCU), internet of things (IoT), and artificial intelligence (AI). https://www.youtube.com/watch?v=EB14K8Gq5-w Ryan Lee, vice president of foundry marketing at Samsung Electronics said: We are very proud of this achievement in offering right embedded non-volatile memory (eNVM) technology after overcoming complicated ...
