Samsung Electronics today has announced that it has begun mass production of first 512GB flash storage for next-generation mobile devices and it utilizes the Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips. The 512GB eUFS Consist of eight 64-layer 512Gb V-NAND chips and a controller chip which are stacked together. It also doubles the Samsung’s previous 48-layer V-NAND-based 256GB … Continue reading "Samsung begins mass production of 512GB eUFS flash memory for flagship smartphones and tablets"
Tuesday, 5 December 2017
Samsung begins mass production of 512GB eUFS flash memory for flagship smartphones and tablets
Samsung Electronics today has announced that it has begun mass production of first 512GB flash storage for next-generation mobile devices and it utilizes the Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips. The 512GB eUFS Consist of eight 64-layer 512Gb V-NAND chips and a controller chip which are stacked together. It also doubles the Samsung’s previous 48-layer V-NAND-based 256GB … Continue reading "Samsung begins mass production of 512GB eUFS flash memory for flagship smartphones and tablets"
